Further information can be found at www.infineon. ![]() Variants 1EDB6275F and 1EDB9275F will follow shortly. CoolSiC MOSFETs 650 V (15 V driving scheme, 1EDB6275F)ĮiceDRIVERs 1EDB7275F and 1EDB8275F are available in 150 mil 8-pin DSO packages and can be ordered now.4.0 V for logic-level MOSFETs (1EDB7275F).The typical output stage clamping speed is as short as 20 ns and supports functionally safe system operation, especially during start-up.ĭesigners can choose between four different output under-voltage lockout (UVLO) options: The input-to-output propagation delay accuracy is +/- 4 ns helping to cut switching losses, which is essential in fast-switching applications. This feature plays a vital role in reducing the switching losses of power MOSFETs. The new 1EDB family addresses all these applications, ensuring high system efficiency and robust and safe system operation.Īll products come with separate and very low ohmic (0.95 Ω) source and (0.48 Ω) sink outputs for ease of design, offering typical drive strengths of 5.4 A peak source and 9.8 A peak sink. Photovoltaic inverters take advantage of silicon carbide MOSFETs as they enable both lower switching losses and a significant step forward in power density. The board has a size of 85 x 85 x 15 mm without any power switch assembled. Due to their increased power-density need, EV-charging designs often require fast-switching power MOSFETs. The EVAL-1ED3890MX12M is in half-bridge configuration with two gate driver ICs (1ED3890MX12M) to drive power switches such as Si MOSFETs, IGBTs and SiC MOSFETs. They can solve PCB-layout problems, common in high-power applications such as server and telecom switched-mode power supplies (SMPS) as well as uninterruptable power supply (UPS) systems. The new 1EDB family includes four parts (1EDB6275F, 1EDB7275F, 1EDB8275F and 1EDB9275F) and is optimized for both high/low-side applications. Their common-mode transient immunity (CMTI) exceeds 300 V/ns, making these devices the perfect choice for hard switching applications enabling numerous topologies. The new EiceDRIVER 1EDB family of single-channel gate-driver IC provides galvanic input-to-output isolation of 3 kV rms (UL 1577) that ensures rugged ground-loop separation. ![]() Infineon Technologies AG expands its growing portfolio of single-channel gate-driver ICs. EiceDRIVER 1EDB single-channel gate-driver IC family with integrated galvanic isolation in small 150 mil 8-pin DSO package
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